Product Summary
The K1023 is a N-channel silicon power MOS-FET.
Parametrics
Absolute maximum ratings: (1)drain-source voltage:800V; (2)continuous drain current:4A; (3)pulsed drain current:10A; (4)continuous reverse drain current:4A; (5)gate-sourece peak voltage:±30V; (6)max. power dissipation:60W; (7)operating temperature range:150℃; (8)storage temperature range:-55℃ to +150℃.
Features
Features: (1)high speed switching; (2)low on-resistance; (3)no secondary breakdown; (4)low driving power; (5)high voltage; (6)VGSS=±30V guarantee; (7)avalanche-proof.
Diagrams

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                            ![]() K102  | 
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                            ![]() Negotiable  | 
                            
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                            ![]() K102K15X7RF55L2  | 
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                            ![]() CAP CER 1000PF 50V 10% RADIAL  | 
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                            ![]() K102K15X7RF5BH5  | 
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                            ![]() CAP CER 1000PF 50V 10% RADIAL  | 
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                            ![]() K102K15X7RF5TH5  | 
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                            ![]() CAP CER 1000PF 50V 10% RADIAL  | 
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                            ![]() K102K15X7RF5TH5V  | 
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                            ![]() CAP CER 1000PF 50V 10% RADIAL  | 
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                            ![]() K102K15X7RF5TL2  | 
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                            ![]() CAP CER 1000PF 50V 10% RADIAL  | 
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 (Hong Kong) 
                         
                        
                                    



