(Hong Kong)
Product Summary
The BUZ73AL is a SIPMOS Power Transistor.
Parametrics
Absolute maximum ratings: (1)Gate source voltage:±20V; (2)Power dissipation:TC=25℃:40W; (3)Operating temperature:-55℃ to +150℃; (4)Storage temperature:-55℃ to +150℃; (5)Thermal resistance, chip case:≤3.1K/W; (6)Thermal resistance, chip to ambient:75K/W; (7)Continuous drain current:TC=37℃:5.5A; (8)Pulsed drain current:TC=25℃:22A; (9)Avalanche current,limited by Tjmax:7A; (10)Avalanche energy,periodic limited by Tjmax:6.5mJ.
Features
Features: (1)N channel; (2)Enhancement mode; (3)Avalanche-rated; (4)Logic Level.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BUZ73AL |
Infineon Technologies |
MOSFET N-CH 200V 5.5A |
Data Sheet |
Negotiable |
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BUZ73AL H |
Infineon Technologies |
MOSFET N-Channel 200V Transistor |
Data Sheet |
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