Product Summary
The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’Silicon Germanium Technology B7HF.
Parametrics
Absolute maximum ratings: (1)Voltage at pin Vcc:3.5V; (2)Voltage at pin Out:4V; (3)Current into pin In:0.1mA; (4)Current into pin Out:1mA; (5)Current into pin Vcc:10mA; (6)RF input power:6dBm; (7)Total power dissipation, TS < 139℃):35mW; (8)Junction temperature:150℃; (9)Ambient temperature range:-65℃ to +150℃; (10)Storage temperature range:-65℃ to +150℃; (11)Thermal resistance: junction-soldering point:300K/W.
Features
Features: (1)Low noise figure, NF=1.1 dB at 2.14 GHz; (2)Operating frequency range:0.5GHz to 6GHz; (3)Typical supply voltage: 2.75 V; (4)On/Off-Switch; (5)Output-match on chip, input pre-matched; (6)Low part count; (7)70 GHz fT-Silicon Germanium technology.
Diagrams

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                            ![]() BGA622  | 
                            ![]() Other  | 
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                            ![]() BGA612  | 
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                            ![]() BGA612E6327  | 
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                            ![]() IC AMP MMIC 80MA 2.8V SOT343  | 
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                            ![]() Negotiable  | 
                            
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                            ![]() BGA6130,118  | 
                            ![]() NXP Semiconductors  | 
                            ![]() RF Amplifier Hi EFF Amp 2700MHz  | 
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                            ![]() BGA614  | 
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                            ![]() Negotiable  | 
                            
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                            ![]() BGA614E6327  | 
                            ![]()  | 
                            ![]() IC AMP MMIC 80MA 3V SOT343  | 
                            ![]() Data Sheet  | 
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                            ![]() BGA616  | 
                            ![]() Other  | 
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                            ![]() Negotiable  | 
                            
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 (Hong Kong) 
                         
                        
                                    






